高级检索

二维半导体中电子能谷研究新进展

The valleytronics of novel 2-dimension semiconductors

  • 摘要: 物质材料伴随着体系维度的降低往往会衍生出新的特性,展现丰富的物理现象,并带来新奇可观测及可操控的量子态。作为新兴超薄半导体出现的二维六族过渡金属硫化物,除了具有区别于块体材料的直接能隙,在其第一布里渊区里还存在着简并但不等价的分立能谷。由于体系中空间反演对称性的破缺,在这些能谷里,电子及空穴具有非零且相反的轨道磁矩以及贝里曲率,从而提供了利用外场对能谷自由度进行量子调控的前提。文章对二维六族过渡金属硫化物中能谷电子学的发展进行了介绍,并对未来的潜在发展方向做出一些展望。

     

    Abstract: With reduced dimensionality, materials always display unique physical properties that differ greatly from their bulk counterparts, at the same time exhibiting novel quantum states. Two-dimensional (2D) Group-VI transition metal dichalcogenides (TMD), a newly emerging class of atomically thin semiconductors, have sizeable direct band gaps. Additionally, in the first Brillouin zone, there are degenerate but nonequivalent valleys which are well separated in momentum space. Due to the inversion symmetry breaking in their monolayer form, at different valleys in the Brillouin zone the electrons or holes carry non-zero but contrasting orbital magnetic moments and Berry curvatures, which provide the prerequisites of quantum manipulation of the valley degree of freedom with an external stimulus. We present here a brief overview of the valleytronics of 2D TMDs, followed by some perspectives on potential developments.

     

/

返回文章
返回