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何珂. 从磁性掺杂拓扑绝缘体到内禀磁性拓扑绝缘体——通往高温量子反常霍尔效应之路[J]. 物理, 2020, 49(12): 828-836. DOI: 10.7693/wl20201204
引用本文: 何珂. 从磁性掺杂拓扑绝缘体到内禀磁性拓扑绝缘体——通往高温量子反常霍尔效应之路[J]. 物理, 2020, 49(12): 828-836. DOI: 10.7693/wl20201204
HE Ke. From magnetically doped to intrinsic magnetic topological insulators——a road towards the high temperature quantum anomalous Hall effect[J]. PHYSICS, 2020, 49(12): 828-836. DOI: 10.7693/wl20201204
Citation: HE Ke. From magnetically doped to intrinsic magnetic topological insulators——a road towards the high temperature quantum anomalous Hall effect[J]. PHYSICS, 2020, 49(12): 828-836. DOI: 10.7693/wl20201204

从磁性掺杂拓扑绝缘体到内禀磁性拓扑绝缘体——通往高温量子反常霍尔效应之路

From magnetically doped to intrinsic magnetic topological insulators——a road towards the high temperature quantum anomalous Hall effect

  • 摘要: 量子反常霍尔效应被认为是已知的拓扑量子效应中最有希望获得广泛实际应用的一个。阻碍其应用的主要障碍是其很低的实现温度。文章介绍了在磁性拓扑绝缘体中量子反常霍尔效应的机理和决定其实现温度的因素,回顾了过去几年在提高量子反常霍尔效应实现温度方面的研究进展,尤其是最近内禀磁性拓扑绝缘体MnBi2Te4的相关工作。在此基础上提出在磁性拓扑绝缘体系统中进一步提高量子反常霍尔效应温度的路线图。

     

    Abstract: Among the existing topological quantum effects, the quantum anomalous Hall effect is arguably the most promising one for wide practical applications, but the main challenge is the ultra-low temperature required. In this article we describe the mechanism of the quantum anomalous Hall effect in magnetic topological insulators and the key factors that determine its occurring temperature. Recent efforts over the past years to elevate this temperature is reviewed, particularly the latest studies on the intrinsic magnetic topological insulator MnBi2Te4. Based on this, we present a roadmap on how to further raise the temperature of the effect in magnetic topological insulator-based systems.

     

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