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二维铁谷材料与多铁耦合

Two-dimensional ferrovalley materials and multiferroic coupling

  • 摘要: 谷电子材料通过调节谷自由度编码和处理信息,在下一代信息存储器件中极具应用潜力。谷自由度与多种铁性序参量相互耦合,可以实现非易失的信息存储,这同时促进了谷物理和多铁性物理的发展。文章首先介绍谷电子学物理背景、各类存在自发谷极化的本征谷材料,随后概述二维多铁材料的磁电谷耦合,最后关注了谷电子器件的最新进展,对二维铁谷材料多铁耦合的发展前景做出展望。

     

    Abstract: Valleytronic materials encode and process information by modulating the valley degrees of freedom, and have great potential for information memory devices of the next generation. The coupling of the valley degrees of freedom with various ferroic order parameters will be of great advantage for nonvolatile memory technology, and can promote the development of both valley physics and multiferroic physics. This paper presents an overview of the valleytronics physical background and enumerates various ferrovalley materials with spontaneous valley polarization. Secondly, magnetoelectric valley coupling of two-dimensional multiferroic materials is summarized, Finally, latest progress of valleytronic applications is introduced, potential applications of multiferroic coupling of two-dimensional ferrovalley materials are outlined.

     

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