尺寸缩小带来的巨大挑战
Some issues of the material physics for ultra large scale integration(part Ⅱ) giant challenges for the scaled ulsi
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摘要: 随着CMOS技术缩至100nm或更小，在CMOS器件结构、接触电阻以及大直径硅晶片等方面均遇到一些材料物理的巨大挑战.Abstract: We discuss the giant challenges that material physics faces regarding the structure of CMOS devices, contact resistance, and large diameter silicon wafers when CMOS technology reaches below 100nm.
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