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一种新的半导体材料和器件结构:COS

Crystalline oxides on semiconductor a novel semiconductor material and device structure

  • 摘要: 国际半导体技术发展进程表预期器件的特征尺寸不久将减小到01μm以下,SiO-2作为MOS器件栅介质遇到不可克服的困难.人们在寻找新的栅介质材料时,提出了一种新的结构,称为半导体上的晶态氧化物(COS).最近,COS被用作Si衬底上生长GaAs的过渡层,成为半导体材料和器件发展中一项新的突破.文章对这一结构的进展情况做一简要介绍.

     

    Abstract: The International Technology Roadmap for Semiconductors(ITRS) predicts the more aggressive scaling rule that the feature size of Si chips will soon reach the 0\^1μm scale. It will be impossible to use SiO2 again as the gate dielectric in next generation devices because of the unacceptable large leakage current. In the search for new alternatives, a novel structure COS(crystalline oxides on semiconductor) has been suggested. Recently, this COS structure was employed to serve as a buffer layer in the epitaxial growth of GaAs on Si substrate.This invention led to a breakthrough in the development of semiconductor materials and device technology. We present a brief review of the background and progress of COS technology.

     

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