Abstract: Silicon on insulator(SOI) and SiGe are both promising materials to the microelectronics including due to their potential in low voltage, low power, high speed applications and compatibility with mature Si technology. A new SOI structure, SiGe-OI, which appeared recently integrates the advantages of both SOI and SiGe, and has become one of the new frontiers in the microelectronics field. We review the resent research on SiGe-OI, its applications and fabrication, including some results of our own work.