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在Si衬底上自组装生长Ge量子点研究进展

Research progress of self-assembled Ge quantum dots on a Si substrate

  • 摘要: 在Si衬底上自组装生长纳米尺度的Ge量子点,由于三维量子限制效应的贡献,能够在能带结构上对Si、Ge天然材料的间接带特性实施准直接带结构的改性,使激子行为和带间复合跃迁得到大幅度增强,同时Ge量子点的可控有序相关排列还有助于发展新一代的Si基电子波量子器件.文章回顾了自20世纪80年代末至今Ge/Si量子点生长研究的重要进展,对其潜在的重要应用作出了评述.结合作者自己的研究结果,着重介绍了Ge量子点的生长动力学及其形态的演变过程,指出自组装生长的Ge/Si量子点属Ⅱ型能带结构,其发光效率比一维量子阱有很大增强.探讨了用模板衬底实现对Ge量子点尺寸和分布的有序可控生长方法与途径.

     

    Abstract: Indirect energy band structure can be transformed to a direct structure in nano-scale Ge quantum dots materials self-assembled on a Si substrate, as a result of the three dimensional quantum confinement effect. Enhancement of the exciton behavior and radiative transition via the energy band gap present a possible way for development of effective Si-based active photonic devices and the realization of ordered and uniform Ge quantum dot arrays. Their controllable fabrication, will be helpful for the development of a new generation of Si-based electron-wave quantum devices. A review is presented on the recent development of self-assembled Ge/Si quantum dots and possible wide applications. With reference for our recent research results, emphasis is given to the morphological evolution of Ge grown on a Si (001) substrate and their dynamical process, derivation of the type-Ⅱenergy band diagram of Ge/Si quantum dots through photo-luminescence studies, and our efforts to fabricate ordered and uniform Ge/Si quantum dot arrays with a Si pattern substrate.

     

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