ZnO基紫外探测器研究进展

Research progress in ZnO-based UV detectors

摘要: 近年来，直接带隙宽禁带半导体ZnO（3.37 eV）以其优越的光电特性而成为紫外探测领域研究中的新热点.文章介绍了不同类型的ZnO基紫外光敏探测器的结构和性能，并对ZnO基紫外光敏探测器的最新研究进展和应用前景进行探讨和展望.

Abstract: Recently, ZnO has been regarded as a promising material for UV detectors due to its wide direct bandgap energy of 3.37 eV and excellent optical and electrical properties. We describe the structure and performance of various types of ZnO-based UV detectors, and present a detailed overview of the latest research progress in this field.