Abstract: The localization of carriers has a profound effect on the optical and electrical properties of solid state materials. It has been known for a long time that anomalous luminescence behavior is associated with the localization of carriers involved in the luminescence processes. Here we introduce a newly developed model for luminescence from localized\|state ensembles. The theory is based on a new distribution function obtained by solving a rate equation. With this model we can not only quantitatively interpret anomalies observed in the temperature dependence of the localized\|state luminescence but also clearly reveal the physical mechanisms behind them. Applications of the model in the quantitative analysis of the luminescence spectra in some typical materials are presented.