Abstract: Perovskite Pb(ZrxTi1-x)O3 (PZT) represents one of the most extensively utilized ferroelectrics, in spite of its lead contamination. However, its application in ferroelectric random access memories (FeRAMs) has been hindered due to serious polarization fatigue upon repeated domain switching, so that it has eventually been replaced by layered perovskite ferroelectric Sr2BiTa5O9 (SBT), among others. Since polarization fatigue remains an unsolved physical issue we address this problem by a comprehensive approach in which the associated mechanisms are investigated by fatigue testing at different temperatures, amplitudes and frequencies of the electric field. As a result, we have developed a novel strategy by which the fatigue of PZT thin films deposited on Pt-coated Si wafers can be essentially suppressed.