高级检索

碳化硅表面的外延Graphene

Epitaxial Graphene on SiC

  • 摘要: Graphene具有优异的电学性质,是非常有前途的纳米电子材料,有希望替代硅成为下一代集成电路材料.尽管目前有很多种制备Graphene的方法,但就Graphene在将来集成电路方面的应用而言,在碳化硅上的外延生长法最具潜力.文章首先从Graphene的能带结构开始,简单介绍为什么Graphene具有诸多优异的电学性质,比如异常霍尔效应、室温下的高迁移率、碳纳米管的弹道输运等.然后介绍这种外延生长方法及其发展现状.通过比较在不同碳化硅晶面和在不同条件下生长的Graphene的表面形貌,得出结论,在加热炉内

     

    Abstract: Graphene is a promising nanoelectronic material that may replace silicon owing to its extraordinary electronic properties. Among many other methods of making Graphene, epitaxial growth on silicon carbide is of great potential in electronic application. In this paper, the band structure of Graphene is first introduced and it is explained how the band structure is related to its electronic properties, such as the anomalous quantum Hall effect, high mobility even at room temperature and ballistic transport in carbon nanotubes. The epitaxial growth method is then reviewed. By comparing the surface morphology of the material grown on different crystal face of SiC and in different conditions, it is shown that furnace grown C-face Graphene is particularly exceptional. After that, electronic characterization of C-face Graphene is discussed,where it is shown that the system has characteristics of Dirac electrons and possesses great properties.

     

/

返回文章
返回