SOI纳米线波导导光机理的物理分析

The physics of silicon-on-insulator nanowire waveguides

摘要: SOI（silicon-on-insulator）纳米线波导及其器件是近年来光电子学领域研究的重点内容之一.文章从基本的导波光学理论出发，引入古斯-汉森位移理论，对SOI纳米线波导导光的物理机制进行了分析并给出了物理解释和模拟结果.

Abstract: Nanowire waveguides and devices have become a key point of optoelectronics in recent years. In this paper, the physics of silion-on-insulator nanowire waveguides is analyzed and explained based on the Goos-Hnchen displacement theory. Simulation results are also presented.